Ceramic electronic component

ABSTRACT

A ceramic electronic component includes a body including dielectric layers and a plurality of internal electrodes and an external electrode including a connection portion and a band portion. The external electrode includes an electrode layer, a conductive resin layer, a nickel plating layer, and a tin plating layer. When an electrode layer thickness, a conductive resin layer thickness, a nickel plating layer thickness, a tin plating layer thickness of the band portion are defined as t3, t4, and t5, respectively, t5 is greater than or equal to 0.5 micrometer and less than 7 micrometer, and t5/(t3+t4) satisfies 1≤t5/(t3+t4)*100&lt;17.5 in the case in which t3+t4 is less than or equal to 100 micrometers and satisfies 0.3≤t5/(t3+t4)*100&lt;4.38 in the case in which t3+t4 is more than 100 micrometers.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is the continuation application of U.S. patentapplication Ser. No. 16/195,181 filed on Nov. 19, 2018, which claims thebenefit of priority to Korean Patent Application No. 10-2018-0114260filed on Sep. 21, 2018 in the Korean Intellectual Property Office, thedisclosures of which are incorporated herein by reference in theirentirety.

BACKGROUND 1. Field

The present disclosure relates to a ceramic electronic component.

2. Description of Related Art

A multilayer ceramic capacitor, which is a type of ceramic electroniccomponent, is mounted on printed circuit boards of various electronicproducts, including display devices such as a liquid crystal display(LCD), a plasma display panel (PDP), and the like, computers,smartphones, mobile phones, and the like, serving to charge or dischargeelectricity.

Such a multilayer ceramic capacitor may be used as a component ofvarious types of electronic devices, due to advantages thereof such ascompactness, high capacitance, and ease of mounting. Due to the trendfor small-sized and high-power electronic devices such as computers,mobile devices, and the like, there is an increasing need forsmall-sized, high-capacitance multilayer ceramic capacitors.

Recently, as industrial interest in electric components is increasing,multilayer ceramic capacitors are being required to havehigh-reliability and high-strength characteristics to be used inautomobile or infotainment systems.

In detail, multilayer ceramic capacitors have been required to have highflexural strength characteristics.

Accordingly, it is necessary to improve internal and externalstructures.

SUMMARY

An aspect of the present disclosure may provide a ceramic electroniccomponent having excellent reliability.

According to an aspect of the present disclosure, a ceramic electroniccomponent includes a body including dielectric layers and a plurality ofinternal electrodes disposed to face each other with the dielectriclayers interposed therebetween, the body having first and secondsurfaces disposed to oppose each other, third and fourth surfacesconnected to the first and second surfaces and disposed to oppose eachother, and fifth and sixth surfaces connected to the first to fourthsurfaces and disposed to oppose each other, and an external electrodeincluding a connection portion disposed on the third or fourth surfaceof the body and a band portion extending from the connection portion toportions of the first and second surfaces. The external electrodeincludes an electrode layer connected to the internal electrode, aconductive resin layer disposed on the electrode layer, a nickel (Ni)plating layer disposed on the conductive resin layer, and a tin (Sn)plating layer disposed on the Ni plating layer. The Ni plating layerextends beyond the conductive resin layer, and the Sn plating layerextends beyond the Ni plating layer. When t1 is an extent of the Niplating layer in direct contact with the body in the band portion and t2is an extent of the Sn plating layer in direct contact with the body inthe band portion, t1 is greater than or equal to 0.5 micrometer and lessthan 7 micrometers, while t1/t2 satisfies 0<t1/t2<0.7 or 1.0≤t1/t2<7.0.

According to an aspect of the present disclosure, a ceramic electroniccomponent includes a body including dielectric layers and a plurality ofinternal electrodes disposed to face each other with the dielectriclayers interposed therebetween, the body having first and secondsurfaces disposed to oppose each other, third and fourth surfacesdisposed to oppose each other, and fifth and sixth surfaces disposed tooppose each other, and an external electrode including a connectionportion disposed on the third or fourth surface of the body and a bandportion extending from the connection portion to portions of the firstand second surfaces. The external electrode includes an electrode layerconnected to the internal electrode, a conductive resin layer disposedon the electrode layer, a nickel (Ni) plating layer disposed on theconductive resin layer, and a tin (Sn) plating layer disposed on the Niplating layer. When an electrode layer thickness of the band portion isdefined as t3, a conductive resin layer thickness of the band portion isdefined as t4, a nickel (Ni) plating layer thickness of the band portionis defined as t5, and a tin (Sn) plating layer of the band portion isdefined as t6, t5 is greater than or equal to 0.5 micrometer and lessthan 7 micrometers, and t5/(t3+t4) satisfies 1≤t5/(t3+t4)*100<17.5 inthe case in which t3+t4 is less than or equal to 100 micrometers andsatisfies 0.3≤t5/(t3+t4)*100<4.38 in the case in which t3+t4 is morethan 100 micrometers.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the presentdisclosure will be more clearly understood from the following detaileddescription, taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a perspective view of a ceramic electronic component accordingto an exemplary embodiment in the present disclosure;

FIG. 2 is a cross-sectional view taken along line I-I′ in FIG. 1;

FIG. 3A illustrates a ceramic green sheet on which a first internalelectrode is printed, and FIG. 3B illustrates a ceramic green sheet onwhich a second internal electrode is printed;

FIG. 4 is an enlarged view of region ‘P1’ in FIG. 2;

FIG. 5 is an enlarged view of region ‘P2’ in FIG. 2; and

FIG. 6 is an enlarged view of region ‘P3’ in FIG. 2.

DETAILED DESCRIPTION

Hereinafter, embodiments in the present disclosure will be described asfollows with reference to the attached drawings. The present disclosuremay, however, be embodied in many different forms and should not beconstrued as being limited to the embodiments set forth herein. Rather,these embodiments are provided so that this disclosure will be thoroughand complete, and will fully convey the scope of the present disclosureto those skilled in the art. In the drawings, the shapes and dimensionsof elements may be exaggerated for clarity, and the same referencenumerals will be used throughout to designate the same or likecomponents.

Also, elements having the same function within a scope of the sameconcept illustrated in drawings of respective embodiments will bedescribed by using the same reference numerals. Terms used in thepresent specification are for explaining the embodiments rather thanlimiting the present invention. Unless explicitly described to thecontrary, a singular form includes a plural form in the presentspecification. The word “comprise” and variations such as “comprises” or“comprising,” will be understood to imply the inclusion of statedconstituents, steps, operations and/or elements but not the exclusion ofany other constituents, steps, operations and/or elements.

In drawings, an X direction may be defined as a second direction, an Ldirection or a length direction, a Y direction may be defined as a thirddirection, a W direction or a width direction, and a Z direction may bedefined as a first direction or a laminated direction, a T direction ora thickness direction.

Ceramic Electronic Component

FIG. 1 is a perspective view of a ceramic electronic component accordingto an exemplary embodiment in the present disclosure.

FIG. 2 is a cross-sectional view taken along line I-I′ in FIG. 1.

FIG. 3A illustrates a ceramic green sheet on which a first internalelectrode is printed, and FIG. 3B illustrates a ceramic green sheet onwhich a second internal electrode is printed.

Referring to FIGS. 1 to 3B, a capacitor component 100 according to anexemplary embodiment includes a body 110 and external electrodes 131 and132. The body 110 includes a plurality of dielectric layers 111 andfirst and second internal electrodes 121 and 122 alternately disposed toface each other with the dielectric layers 111 interposed therebetween,and has first and second surfaces 1 and 2 disposed to oppose each other,third and fourth surfaces 3 and 4 connected to the first and secondsurfaces 1 and 2 and disposed to oppose each other, and fifth and sixthsurfaces 5 and 6 connected to the first to fourth surfaces 1 to 4 anddisposed to oppose each other. The external electrodes 131 and 132include connection portions C disposed on the third surface 3 and thefourth surface 4 of the body 110 and band portions B extending from theconnection portion C to portions of the first and second surfaces 1 and2. The external electrodes 131 and 132 include electrode layers 131 aand 132 a connected to the internal electrodes 121 and 122, conductiveresin layers 131 b and 132 b disposed on the electrodes 131 a and 132 a,nickel (Ni) plating layers 131 c and 132 c disposed on the conductiveresin layers 131 b and 132 b, and tin (Sn) plating layers 131 d and 132d disposed on the conductive resin layers 131 b and 132 b. When anextent of the Ni plating layer 131 c or 132 c in direct contact with thebody 110 in the band portion B is defined as t1 and an extent of the Snplating layer 131 d or 132 d in direct contact with the body 110 in theband portion B is defined as t2, t1 is greater than or equal to 0.5micrometer (μm) and less than 7 μm, while t1/t2 satisfies 0<t1/t2<0.7 or1.0≤t1/t2<7.0.

Hereinafter, a ceramic electronic component according to an exemplaryembodiment will be described. In detail, a multilayer ceramic capacitorwill be described but the description will not be limited thereto.

In the body 110, the dielectric layers 111 and the internal electrodes121 and 122 are alternately laminated.

The body 110 is not limited in shape, but may have a hexahedral shape ora shape similar thereto. During shrinkage of a ceramic powder includedin the body 110 during sintering, the body 110 may have a substantiallyhexahedral shape rather than a hexahedral shape having complete straightlines.

The body 110 may have first and second surfaces 1 and 2 disposed tooppose each other in a thickness direction (Z direction), third andfourth surfaces 3 and 4 connected to the first and second surfaces 1 and2 and disposed to oppose each other in a length direction (X direction),and fifth and sixth surfaces connected to the first and second surfaces1 and 2 as well as the third and fourth surfaces 3 and 4 and disposed tooppose each other in a width direction (Y direction).

The plurality of dielectric layers 111 constituting the body 110 issintered, and may be integrated with each other such that boundariestherebetween may not be readily apparent without using a scanningelectron microscope (SEM).

According to an exemplary embodiment, a material of the dielectriclayers 111 is not limited as long as sufficient capacitance can beobtained. For example, the material of the dielectric layers 111 may abarium titanate-based material, a lead composite perovskite-basedmaterial, a strontium titanate-based material or the like.

According to purposes of the present disclosure, a ceramic additive, anorganic solvent, a plasticizer, a binder, a dispersant, and the like maybe added to a powder such as barium titanate (BaTiO₃) which is amaterial of the dielectric material 111.

The plurality of internal electrodes 121 and 122 may be disposed to faceeach other with the dielectric layer 111 interposed therebetween.

The first and second may be exposed to the third and fourth surfaces 3and 4 of the body 110, respectively.

Referring to FIGS. 1 and 2, the first internal electrode 121 may bespaced apart from the fourth surface 4 and exposed through the thirdsurface 3, and the second internal electrode 122 may be spaced apartfrom the third surface 3 and exposed through the fourth surface 4. Thefirst external electrode 131 may be disposed on the third surface 3 ofthe body 110 to be connected to the first internal electrode 121, andthe second external electrode 132 may be disposed on the fourth surface4 of the body 110 to be connected to the second internal electrode 122.

The first and second internal electrodes 121 and 122 may be electricallyseparated from each other by the dielectric layer 111 interposedtherebetween. Referring to FIGS. 3A and 3B, the body 110 may be formedby alternately laminating a ceramic green sheet ‘a’ on which the firstinternal electrode 121 is printed and a ceramic green sheet ‘b’ on whichthe second internal electrode 122 is printed, in a thickness direction(Z direction) and sintering the laminated ceramic green sheets ‘a’ and‘b’.

A material of the first and second internal electrodes 121 and 122 isnot limited. For example, the first and second internal electrodes 121and 122 may be formed using a conductive paste including at least one ofa noble metal such as palladium (Pd), a palladium-silver (Pd—Ag) alloy,nickel (Ni), and copper (Cu).

A printing method of the conductive paste may be a screen printingmethod, a gravure printing method or the like, but is not limitedthereto.

The capacitor component 100 according to another exemplary embodimentmay include a capacitance forming portion and cover portions 112. Thecapacitance forming portion is disposed inside the body 110, andincludes a first internal electrode 121 and a second internal electrode122 disposed to face each other with the dielectric layer 111 interposedtherebetween in such a manner that capacitance is formed. The coverportions 112 are disposed above and below the capacitance formingportion.

The cover portions 112 do not include internal electrodes 121 and 122,and may include the same material as the dielectric layer 111. Forexample, the cover portions 112 may include a ceramic material such as abarium titanate-based material, a lead composite perovskite-basedmaterial, a strontium titanate-based material, or the like.

The cover portions 112 may be formed by vertically laminating a singledielectric layer or two or more dielectric layers on top and bottomsurfaces of the capacitance forming portion, respectively. The coverportions 112 may basically serve to prevent an internal electrode frombeing damaged by a physical or chemical stress.

The capacitor component 100 according to another exemplary embodimentincludes external electrodes 131 and 132 including a connection portionC disposed on a third surface or a fourth surface 4 of a body 110 andband portions B extending from the connection portion C to portions ofthe first and second surfaces 1 and 2.

The band portions B may extend from the connection portion C to portionsof the first and second surfaces 1 and 2 as well as portions of fifthand sixth surfaces 5 and 6.

The external electrodes 131 and 132 may include a first externalelectrode 131 including a connection portion disposed on the thirdsurface 3 and a second external electrode 132 including a connectionportion disposed on the fourth surface 4.

The first and second external electrodes 131 and 132 may be electricallyconnected to the first and second internal electrodes 121 and 122 toform capacitance, respectively. The second external electrode 132 may beconnected to a potential different from a potential connected to thefirst external electrode 131.

Hereinafter, the first external electrode 131 will be mainly described,but the description will be similarly applied to the second electrode132.

The external electrodes 131 and 132 include electrode layers 131 a and132 a connected to the internal electrodes 121 and 122, conductive resinlayers 131 b and 132 b disposed on the electrode layers 131 a and 132 a,nickel (Ni) plating layers 131 c and 132 c disposed on the conductiveresin layers 131 b and 132 b, and tin (Sn) plating layers 131 d and 132d disposed on the Ni plating layers 131 c and 132 c.

The electrode layers 131 a and 132 a may include a conductive metal anda glass.

The conductive metal for use in the electrode layers 131 a and 132 a isnot limited as long as it may be electrically connected to the internalelectrode to form capacitance. For example, the conductive metal may beat least one selected from the group consisting of copper (Cu), silver(Ag), nickel (Ni), and alloys thereof.

The electrode layers 131 a and 132 a may be formed by coating aconductive paste prepared by adding a glass frit to the conductive metalpowder and sintering the conductive paste.

The conductive resin layers 131 b and 132 b may be disposed on theelectrode layers 131 a and 132 a to fully cover the electrode layers 131a and 132 a.

The conductive resin layers 131 b and 132 b may include a conductivemetal and a base resin.

The base resin included in the conductive resin layers 131 b and 132 bis not limited as long as it may have bonding and shock absorption andmay be mixed with a conductive metal powder to prepare a paste. Forexample, the base resin may include an epoxy-based resin.

The conductive metal included in the conductive resin layers 131 b and132 b is not limited as long as it may be electrically connected to theelectrode layers 131 a and 132 a.

For example, the conductive metal may include at least one selected fromthe group consisting of copper (Cu), silver (Ag), nickel (Ni), andalloys thereof.

The Ni plating layers 131 c and 132 c may be disposed on the conductiveresin layers 131 b and 132 b to fully cover the conductive resin layers131 b and 132 b.

The Sn plating layers 131 d and 132 d may be disposed on the Ni platinglayers 131 c and 132 c to fully cover the Ni plating layers 131 c and132 c.

The Sn plating layers 131 d and 132 d may serve to improve mountingcharacteristics.

FIG. 4 is an enlarged view of region ‘P1’ in FIG. 2.

Referring to FIG. 4, in a ceramic electronic component according to anexemplary embodiment, when an extent t1 of a Ni plating layer 131 c indirect contact with the body 110 in the band portion B is defined as t1and an extent of an Sn plating layer 131 d in direct contact with thebody 110 in the band portion B is defined as t2, t1 may be greater thanor equal to 0.5 micrometer (μm) and less than 7 μm and t1/t2 may satisfy0<t1/t2<0.7 or 1.0≤t1/t2<7.0.

When the extent t1 of the Ni plating layer 131 c in direct contact withthe body 110 in the band portion B is less than 0.5 μm, it may bedifficult to secure solderability. When the extent t1 is more than 7 μm,a frequency of occurrence of flexural cracking caused by plating stressmay be increased to degrade flexural strength characteristics.

When the extent t1 of the Ni plating layer in direct contact with thebody 110 in the band portion B is less than the extent t2 of the Snplating layer 131 d in direct contact with the body 110 on the end ofthe band portion B, t1/t2 should be less than 0.7 to secure sufficientflexural strength. When the extent t1 of the Ni plating layer 131 c indirect contact with the body 110 in the band portion B is greater thanor equal to the extent t2 of the Sn plating layer in direct contact withthe body 110 in the band portion B, t1/t2 should be less than 7 tosecure sufficient flexural strength. For example, t1/t2 should satisfy0<t1/t2<0.7 or 1.0≤t1/t2<7.0 to secure sufficient flexural strength.

As t1 is greater than or equal to 0.7 μm and less than 7 μm while t1/t2satisfies 0<t1/t2<0.7 or 1.0≤t1/t2<7.0, sufficient flexural strength of5 mm or more may be secured.

In this case, the extent t2 of the Sn plating layer 131 d in directcontact with the body 110 in the band portion B is greater than or equalto 0.5 μm and less than 12 μm.

When the extent t2 of the Sn plating layer 131 d in direct contact withthe body 110 in the band portion B is less than 0.5 μm, it may bedifficult to secure solderability. When the extent t2 of the Sn platinglayer 131 d in direct contact with the body 110 on the end of the bandportion B is more than 12 μm, a frequency of occurrence of flexuralcracking caused by a plating stress may be increased to degrade flexuralstrength characteristics.

The Sn plating layers 131 d and 132 d may be disposed on the Ni platinglayers 131 c and 132 c to fully cover the Ni plating layers 131 c and132 c.

The Sn plating layers 131 d and 132 d serves to improve mountingcharacteristics.

FIG. 6 is an enlarged view of region ‘P3’ in FIG. 2.

Referring to FIG. 6, in a capacitor component according to an exemplaryembodiment, a thickness td of the dielectric layer 111 and a thicknesste of each of the internal electrodes 121 and 122 may satisfy td>2*te.

For example, according to another exemplary embodiment, the thickness tdof the dielectric layer 111 is twice greater than the thickness te ofeach of the internal electrodes 121 and 122.

Generally, an important issue of electronic components for high-voltageelectric parts is reliability problem caused by breakdown voltage dropunder a high-voltage environment.

In the capacitor component according to an exemplary embodiment, thedielectric layer 111 is provided to have the thickness td twice greaterthan the thickness te of each of the internal electrodes 121 and 122 toprevent a breakdown voltage from dropping under a high-voltageenvironment. Thus, a thickness of a dielectric layer that is a distancebetween internal electrodes may be increased to improve breakdownvoltage characteristics.

In the case in which the thickness td of the dielectric layer 111 is atmost twice greater than the thickness te of each of the internalelectrodes 121 and 122, a thickness of a dielectric layer that is adistance between internal electrodes may be so small that a breakdownvoltage drops.

The thickness te of each of the internal electrodes 121 and 122 may beless than 1 micrometer (μm) and the thickness td of the dielectric layermay be less than 2.8 μm, but the thicknesses thereof are not limitedthereto.

Hereinafter, a capacitor component according to another exemplaryembodiment will be described in detail.

To avoid duplicate explanations, descriptions to the same or similarelements as set forth in an exemplary embodiment will be omitted inanother exemplary embodiment.

Similarly to the ceramic electronic component according to an exemplaryembodiment, the ceramic electronic component according to anotherexemplary embodiment includes a body 110 and external electrodes 131 and132. The body 110 includes a plurality of dielectric layers 111 andfirst and second internal electrodes 121 and 122 alternately disposed toface each other with the dielectric layers 111 interposed therebetween,and has first and second surfaces 1 and 2 disposed to oppose each otherin the Z direction, third and fourth surfaces 3 and 4 connected to thefirst and second surfaces 1 and 2 and disposed to oppose each other inthe X direction, and fifth and sixth surfaces 5 and 6 connected to thefirst to fourth surfaces 1 to 4 and disposed to oppose each other. Theexternal electrodes 131 and 132 include a connection portion C disposedon the third surface 3 of the fourth surface 4 of the body 110 and bandportions B extending from the connection portion C to portions of thefirst and second surfaces 1 and 2. The external electrode layers 131 and132 may include electrode layers 131 a and 132 a, conductive resinlayers 131 b and 132 b disposed on the electrode layers 131 a and 132 a,Nickel (Ni) plating layers 131 c and 132 c disposed on the conductiveresin layers 131 b and 132 b, and tin (Sn) plating layers 131 d and 132d disposed on the Ni plating layers 131 c and 132 c.

When a thickness of each of the electrode layers 131 a and 132 a of theband portion B is defined as t3, a thickness of each of the conductiveresin layers 131 b and 132 b is defined as t4, a thickness of each ofthe Ni plating layers 131 c and 132 c is defined as t5, and a thicknessof each of the Sn plating layers 131 d and 132 d is defined as t6, thet5 is greater than or equal to 0.5 μm and less than 7 μm. In the case inwhich t3+t4 is less than or equal to 100 μm, the t3 and t4 satisfy1≤t5/(t3+t4)*100<17.5. In the case in which t3+t4 is more than 100 μm,the t3 and t4 satisfy 0.3≤t5/(t3+t4)*100<4.38.

In this case, t3 to t6 may be thicknesses measured in a central portionof the band portion B.

Hereinafter, the first external electrode 131 will be mainly described,but the description will be similarly applied to the second electrode132.

FIG. 5 is an enlarged view of region ‘P2’ in FIG. 2.

Referring to FIG. 5, a nickel (Ni) plating layer 132 c of a band portionB has a thickness t5 greater than or equal to 0.5 μm and less than 7 μm.

When the thickness t5 of the Ni plating layer 132 c is less than 0.5, itmay be difficult to secure solderability.

When the thickness t5 of the Ni plating layer 132 c is more than 7 μm, afrequency of occurrence of flexural cracking caused by a plating stressmay be increased to degrade flexural strength characteristics.

Since sufficient flexural strength may not be secured only controllingthe thickness t5 of the Ni plating layer 132 c of the band portion B,the thickness t5 of the Ni plating layer 132 c of the band portion Bshould be controlled considering the sum of a thickness t3 of theelectrode layer 132 a and a thickness t4 of the conductive resin layer132 b.

Accordingly, to secure sufficient flexural strength of 5 mm or more,t3+t4 should satisfy 1≤t5/(t3+t4)*100<17.5 when t5 is greater than orequal to 0.5 μm and less than 7 μm and t3+t4 is less than or equal to100 μm, and t3+t4 should satisfy 0.3≤t5/(t3+t4)*100<4.38 when t5 isgreater than or equal to 0.5 μm and less than 7 μm and t3+t4 is morethan 100 μm.

In this case, the thickness t5 of the Ni plating layer 132 c of the bandportion B may be greater than or equal to 0.5 μm and less than 12 μm.

When the thickness t5 of the Ni plating layer 132 c of the band portionB is less than 0.5 μm, it may be difficult to secure solderability. Whenthe thickness t5 of the Ni plating layer 132 c of the band portion B ismore than 12 μm, a frequency of occurrence of flexural cracking causedby a plating stress may be increased to degrade flexural strengthcharacteristics.

In Table (1), solderability and flexural strength depending on an extentt1 of a nickel (Ni) plating layer in direct contact with the body 110 inthe band portion B and an extent t2 of a tin (Sn) plating layer indirect contact with the body 110 in the band portion B were evaluatedand shown.

Regarding solderability, a mark ‘o’ refers to to a case in whichexternal electrodes of samples of a multilayer ceramic capacitor weredipped into a solder and 95 area percent or more of the externalelectrodes was covered with the solder, and a mark ‘X’ refers to a casein which less than 95 area percent of the external electrodes wascovered with the solder.

In the flexural strength, a mark ‘o’ refers to a case in which crackingdid not occur, and a mark ‘X’ refers to a case in which crackingoccurred. After the samples of the multilayer ceramic capacitor weremounted on a board, a distance from a central portion pressed duringbending was set to be 5 mm to observe whether cracking occurred.

TABLE 1 Sample t1 t2 Flexural No. (μm) (μm) t1/t2 Solderability Strength 1 1 1 1 ◯ ◯  2 1 3 0.3 ◯ ◯  3 1 5 0.2 ◯ ◯  4 1 7 0.1 ◯ ◯  5 1 10 0.1 ◯◯  6 3 1 3 ◯ ◯  7 3 3 1 ◯ ◯  8 3 5 0.6 ◯ ◯  9 3 7 0.4 ◯ ◯ 10 3 10 0.3 ◯◯ 11 5 1 5 ◯ ◯ 12 5 3 1.7 ◯ ◯ 13 5 5 1 ◯ ◯ 14* 5 7 0.7 ◯ X 15 5 10 0.5 ◯◯ 16* 7 1 7 ◯ X 17* 7 3 2.3 ◯ X 18* 7 5 1.4 ◯ X 19* 7 7 1 ◯ X 20* 7 100.7 ◯ X *Comparative Example

Referring to Table (1), in samples No. 1 to 13 and 15, t1 was greaterthan or equal to 0.5 μm and less than 7 μm and t1/t2 satisfied0<t1/t2<0.7 or 1.0≤t1/t2<7.0. Thus, solderability and flexural strengthwere excellent.

Meanwhile, in sample No. 14, t1 was greater than or equal to 0.5 μm andless than 7 μm and t1/t2 was 0.7. Since t1 satisfied the condition butt1/t2 did not satisfy the condition proposed in the present disclosure,the flexural strength was inferior.

In samples No. 16 and 20, t1 was 7 μm and t1/t2 was 0.7, which did notsatisfy the condition proposed in the present disclosure. Thus, theflexural strength was inferior.

In samples No. 17 to 19, t1/t2 satisfied the condition proposed in thepresent disclosure, but t1 was as great as 7 μm. Thus, flexural strengthwas inferior.

In Table (2), solderability and flexural strength depending on athickness t3 of an electrode layer of a band portion B, a thickness t4of a conductive resin layer of the band portion B, a thickness t5 of anickel (Ni) plating layer of the band portion B, and a thickness t6 of atin (Sn) plating layer of the band portion B were evaluated and areshown.

The thicknesses t3 to t5 were measured in a central portion of the bandportion B, and a method of evaluating the solderability and flexuralstrength in Table (2) was identical to a method of evaluating thesolderability and the flexural strength in Table (1).

TABLE 2 Sample t3 t4 t5 t6 t5/(t3 + Flexural No. (μm) (μm) (μm) (μm)t4)*100 Solderability Strength 21 20 20 1 1 2.5 ◯ ◯ 22 20 20 1 10 2.5 ◯◯ 23 20 20 5 1 12.5 ◯ ◯ 24 20 20 5 10 12.5 ◯ ◯ 25* 20 20 7 1 17.5 ◯ X26* 20 20 7 10 17.5 ◯ X 27 50 50 1 1 1 ◯ ◯ 28 50 50 1 10 1 ◯ ◯ 29 50 505 1 5 ◯ ◯ 30 50 50 5 10 5 ◯ ◯ 31* 50 50 7 1 7 ◯ X 32* 50 50 7 10 7 ◯ X33 80 80 1 1 0.63 ◯ ◯ 34 80 80 1 10 0.63 ◯ ◯ 35 80 80 5 1 3.13 ◯ ◯ 36 8080 5 10 3.13 ◯ ◯ 37* 80 80 7 1 4.38 ◯ X 38* 80 80 7 10 4.38 ◯ X 39 120120 1 1 0.42 ◯ ◯ 40 120 120 1 10 0.42 ◯ ◯ 41 120 120 5 1 2.08 ◯ ◯ 42 120120 5 10 2.08 ◯ ◯ 43* 120 120 7 1 2.92 ◯ X 44* 120 120 7 10 2.92 ◯ X 45150 150 1 1 0.33 ◯ ◯ 46 150 150 1 10 0.33 ◯ ◯ 47 150 150 5 1 1.67 ◯ ◯ 48150 150 5 10 1.67 ◯ ◯ 49* 150 150 7 1 2.33 ◯ X 50* 150 150 7 10 2.33 ◯ X*Comparative Example

Referring to Table (2), samples No. 21 to 32 corresponded to a case inwhich t3+t4 were less than or equal to 100 μm. Samples No. 21 to 24 and27 to 30 which satisfied both 0.5 μm≤t5<7 μm and 1≤t5/(t3+t4)*100<17.5exhibited excellent flexural strength, but samples No. 25, 26, 31, and32 which did not satisfy at least one of 0.5 μm≤t5<7 μm and1.0≤t5/(t3+t4)*100<17.5 exhibited inferior flexural strength.

Samples No. 33 to 50 corresponded to a case in which t3+t4 was more than100 μm. Samples No. 33 to 36, 39 to 42, and 45 to 48 which satisfiedboth 0.5 μm≤t5<7 μm and 0.3≤t5/(t3+t4)*100<4.38 exhibited excellentflexural strength. Samples No. 3738, 43, 44, 49, and 50 which did notsatisfy at least one of 0.5 μm≤t5<7 μm and 0.3≤t5/(t3+t4)*100<4.38exhibited inferior flexural strength.

As described above, according to an exemplary embodiment, a thickness ofa nickel (Ni) plating layer of an external electrode may be adjusted tosecure solderability and improve flexural strength.

While exemplary embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinvention as defined by the appended claims.

What is claimed is:
 1. A ceramic electronic component comprising: a bodyincluding dielectric layers and a plurality of internal electrodesdisposed to face each other with the dielectric layers interposedtherebetween, the body having first and second surfaces disposed tooppose each other, third and fourth surfaces connected to the first andsecond surfaces and disposed to oppose each other, and fifth and sixthsurfaces connected to the first to fourth surfaces and disposed tooppose each other; and an external electrode including a connectionportion disposed on at least one selected from the group of the thirdand fourth surfaces and a band portion extending from the connectionportion to portions of the first and second surfaces, wherein theexternal electrode includes an electrode layer electrically connected tothe internal electrode, a conductive resin layer disposed on theelectrode layer, a nickel (Ni) plating layer disposed on the conductiveresin layer, and a tin (Sn) plating layer disposed on the Ni platinglayer, and 0<t1/t2<0.7 or 1.0≤t1/t2<7.0, where t1 is an extent of the Niplating layer in direct contact with the body in the band portion and t2is an extent of the Sn plating layer in direct contact with the body inthe band portion, and t1 is within a range from 0.5 micrometer to 7micrometers, and wherein each of the internal electrodes has a thicknessless than 1 micrometer, each of the dielectric layers has a thicknessless than 2.8 micrometers, and td>2*te, where te is the thickness ofeach of the internal electrodes and td is the thickness of each of thedielectric layers.
 2. The ceramic electronic component of claim 1,wherein t2 is within a range from 0.5 micrometer to 12 micrometers. 3.The ceramic electronic component of claim 1, wherein the electrode layerincludes a glass and at least one conductive metal selected from thegroup consisting of copper (Cu), silver (Ag), nickel (Ni), and alloysthereof.
 4. The ceramic electronic component of claim 1, wherein theconductive resin layer includes a base resin and at least one conductivemetal selected from the group consisting of copper (Cu), silver (Ag),nickel (Ni), and alloys thereof.
 5. A ceramic electronic componentcomprising: a body including dielectric layers and a plurality ofinternal electrodes disposed to face each other with the dielectriclayers interposed therebetween, the body having first and secondsurfaces disposed to oppose each other, third and fourth surfacesconnected to the first and second surfaces and disposed to oppose eachother, and fifth and sixth surfaces connected to the first to fourthsurfaces and disposed to oppose each other; and an external electrodeincluding a connection portion disposed on at least one selected fromthe group of the third and fourth surfaces and a band portion extendingfrom the connection portion to portions of the first and secondsurfaces, wherein the external electrode includes an electrode layerconnected to the internal electrode, a conductive resin layer disposedon the electrode layer, a nickel (Ni) plating layer disposed on theconductive resin layer, and a tin (Sn) plating layer disposed on the Niplating layer, and 1≤t5/(t3+t4)*100<17.5, where t3 is an electrode layerthickness of the band portion, t4 is a conductive resin layer thicknessof the band portion, and t5 is a nickel (Ni) plating layer thickness ofthe band portion, and t3+t4 is less than or equal to 100 micrometers. 6.The ceramic electronic component of claim 5, wherein a thickness of thetin (Sn) plating layer is within a range from 0.5 micrometer to 12micrometers.
 7. The ceramic electronic component of claim 5, whereineach of the internal electrodes has a thickness less than 1 micrometer,and each of the dielectric layers has a thickness less than 2.8micrometers.
 8. The ceramic electronic component of claim 5, whereintd>2*te, where te is a thickness of each of the internal electrodes andtd is a thickness of each of the dielectric layers.
 9. The ceramicelectronic component of claim 5, wherein the electrode layer includes aglass and at least one conductive metal selected from the groupconsisting of copper (Cu), silver (Ag), nickel (Ni), and alloys thereof.10. The ceramic electronic component of claim 5, wherein the conductiveresin layer includes a base resin and at least one conductive metalselected from the group consisting of copper (Cu), silver (Ag), nickel(Ni), and alloys thereof.
 11. A ceramic electronic component comprising:a body including dielectric layers and a plurality of internalelectrodes disposed to face each other with the dielectric layersinterposed therebetween, the body having first and second surfacesdisposed to oppose each other, third and fourth surfaces connected tothe first and second surfaces and disposed to oppose each other, andfifth and sixth surfaces connected to the first to fourth surfaces anddisposed to oppose each other; and an external electrode including aconnection portion disposed on at least one selected from the group ofthe third and fourth surfaces and a band portion extending from theconnection portion to portions of the first and second surfaces, whereinthe external electrode includes an electrode layer connected to theinternal electrode, a conductive resin layer disposed on the electrodelayer, a nickel (Ni) plating layer disposed on the conductive resinlayer, and a tin (Sn) plating layer disposed on the Ni plating layer,and 0.3≤t5/(t3+t4)*100<4.38, where t3 is an electrode layer thickness ofthe band portion, t4 is a conductive resin layer thickness of the bandportion, and t5 is a nickel (Ni) plating layer thickness of the bandportion, and t3+t4 is greater than 100 micrometers.
 12. The ceramicelectronic component of claim 11, wherein a thickness of the tin (Sn)plating layer is within a range from 0.5 micrometer to 12 micrometers.13. The ceramic electronic component of claim 11, wherein each of theinternal electrodes has a thickness less than 1 micrometer, and each ofthe dielectric layers has a thickness less than 2.8 micrometers.
 14. Theceramic electronic component of claim 11, wherein td>2*te, where te is athickness of each of the internal electrodes and td is a thickness ofeach of the dielectric layers.
 15. The ceramic electronic component ofclaim 11, wherein the electrode layer includes a glass and at least oneconductive metal selected from the group consisting of copper (Cu),silver (Ag), nickel (Ni), and alloys thereof.